ec 7 4 5 n 6 0 600 v , 5 a n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 1 o f 5 4 j0 6 n - rev.f001 symbol parameter limit unit to - 220 to - 220f v ds drain - source voltage a 600 v v gs gate - source voltage ? 30 v i d d rain current - continuous, t c =25 5 a drain current - continuous, t c =100 3 a i dm drain current - pulsed b 20 a p d maximum power dissipation @ t j =25 104 35 w e as single pulsed avalanche energy e 114 mj dv/dt peak diode recovery dv/dt c 4.5 v/ns t j , t stg operating and store temperature range - 55 to 150 symbol parameter value unit r ? jc thermal resistance, junction - case max. 1.2 3.6 /w r ? ja thermal resistance, junction - ambient max. 63 /w features 600 v, 5 a, r ds(on) (max.) = 2. 0 @ v gs = 10v low crss fast switchi ng 100 % avalanche tested applications ? ? charger ? ? stb ? ? open framed power supply a bsolute m aximum r atings ( tc = 25 er wise noted ) thermal characteristics
ec 7 4 5 n 6 0 600 v , 5 a n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 2 o f 5 4 j0 6 n - rev.f001 symbol parameter test condition min. typ. max. uni t bv dss drain - source breakdown voltage v gs = 0v, i d = 250a 600 - - v i dss zero gate voltage drain current v ds = 600v, v gs = 0v - - 20 a i gssf forward gate body leakage current v ds = 0v, v gs = 30v - - 100 na i gssr reverse gate body leakage current v d s = 0v, v gs = - 30v - - - 100 na v gs (th) gate threshold voltage v ds = v gs , i d = 250a 2.0 2.9 4.0 v r ds (on) static drain - source on - resistance d v gs = 10v, i d = 3a - 1.6 2 g fs forward transconductance d v ds = 15v, i d = 2.5a - 2.2 10 s ciss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz - 798 - pf coss output capacitance - 114 - pf crss reverse transfer capacitance - 25 - pf td(on) turn - on delay time v dd = 300v, i d = 5a, r g = 10, v gs = 10v - 25 - ns tr turn - on rise time - 8.1 - n s td(off) turn - off delay time - 38 - ns tf turn - off fall time - 7.8 - ns qg total gate charge v ds = 300v, i d = 5a, v gs = 10v - 19 nc qgs gate - source charge - 5.8 nc qgd gate - drain charge - 8 nc electrical characteristics ( t j = 25c unless otherwise noted ) off characteristics on characteristics dynamic characteristics switching ch aracteristics
ec 7 4 5 n 6 0 600 v , 5 a n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 3 o f 5 4 j0 6 n - rev.f001 i s drain - source diode forward continuous current v gs = 0v - - 5 a i sm miximum pulsed current v gs = 0v - - 20 a v sd drain - source diode forward voltage v gs = 0v, i s = 2.5a - 0.81 1.5 v t rr reverse recovery time v gs = 0v, i s = 5 a, di/dt = 100a/s - 310 - ns q rr reverse recovery charge - 2.1 - c drain - sourc e diode characteristics notes : a. t j = +25 c to +150 c. b. repetitive rating; pulse width limited by maximum junction temperature. c. i sd = 5 .0a di/dt Q 100 a/s, v dd Q bv dss , t j Q +150 c. d. pulse width Q 300 s; duty cycle Q 2%. e. l= 1 0mh, v dd = 50 v, i as = 5 a, r g =25 starting t j =25 . square pulse duration (sec) for ec745n60af figure 1. normalized effective transient thermal impedance with pulse duration
ec 7 4 5 n 6 0 600 v , 5 a n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 4 o f 5 4 j0 6 n - rev.f001 v ds , drain - source voltage (v) for ec7 4 5 n 6 0a f r figure 3 maximum safe operating area v ds , drain - sou rce voltage (v) for ec7 4 4 n 7 0a 3 r figure 1 - 2 maximum safe operating area figure 2. normalized on - resistance va riation with temperature figure 5 . gate charge characteristics figure 6 . on - state characteristics figure 4 . capaci tance characteristics figure 7 . body diode forward voltage variation with source current
ec 7 4 5 n 6 0 600 v , 5 a n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 5 o f 5 4 j0 6 n - rev.f001 order ing information part number package marking marking information ec 7 4 5 n 60 a f r to - 220f - 3l 7 4 5 n 6 0 lllll yyww 1. lllll lot no. 2. yy year code 3. ww week code ec 7 4 5 n 60 ar to - 220 - 3l figure 8 . gate threshold variation with temperature figure 9 . transfer characteristics
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